PMV32UP Datasheet, NXP Semiconductors

* 1.8 V drain-source on-state resistance rated
* Very fast switching
* Trench MOSFET technology 1.3 Applications
* Relay driver
* High-speed line dri.

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference.

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 3 1.2 Features and benefits
* 1.8 V drain-source on-state resistance rated
* V.